View 2SD2144S_1197084.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SD2114K / 2SD2144S
Transistors
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) External dimensions (Unit : mm)
2SD2114K
2.90.2 1.90.2 0.95 0.95 (1) (2) 1.1+0.2 -0.1 0.80.1
(3) 0.4 +0.1 -0.05
1.6+0.2 -0.1
2.80.2
00.1
All terminals have same dimensions
0.30.6
+0.1 0.15 -0.06
ROHM : SMT3 EIAJ : SC-59
Abbreviated symbol: BB
(1) Emitter (2) Base (3) Collector
30.2
Structure Epitaxial planar type NPN silicon transistor
2SD2144S
40.2 20.2
(15Min.)
0.45+0.15 -0.05
3Min.
2.5 +0.4 -0.1 5
0.5
+0.15 0.45 -0.05
(1) (2) (3)
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
Denotes hFE
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SD2114K dissipation 2SD2144S Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits 25 20 12 0.5 1 0.2 0.3 150 -55 to +150 Unit V V V A(DC) A(Pulse) W C C
PC Tj Tstg
Single pulse Pw=100ms
Rev.B
1/4
2SD2114K / 2SD2144S
Transistors
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ron
Min. 25 20 12 - - - 820 - - -
Typ. - - - - - 0.18 - 350 8.0 0.8
Max. - - - 0.5 0.5 0.4 2700 - - -
Unit V V V A A V - MHz pF IC=10A IC=1mA IE=10A VCB=20V VEB=10V
Conditions
IC/IB=500mA/20mA VCE=3V, IC=10mA VCE=10V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz IB=1mA, Vi=100mV(rms), f=1kHz
Measured using pulse current
Packaging specifications and hFE
Package Code Type 2SD2114K 2SD2144S hFE VW VW - Basic ordering unit (pieces) Taping T146 3000 TP 5000 -
hFE values are classified as follows :
Item hFE V W
820 to 1800 1200 to 2700
Electrical characteristic curves
2.0
1000
Ta=25C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
1.6
2.0A 1.8A
1.4A 1.2A
800
1.2mA 1.0mA
COLLECTOR CURRENT : IC (mA)
1.6A
1.8mA 2.0mA 1.6mA 1.4mA
1000 500 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8
VCE=3V Measured using pulse current.
1.2
1.0A 0.8A
600
0.8mA 0.6mA
Ta=100C 25C -25C
0.8 0.6A 0.4 0.4A 0.2A 0 0 IB=0 0.1 0.2 0.3 0.4 0.5
400
0.4mA 0.2mA
200
0 0
2
Ta=25C Measured using IB=0mA pulse current. 4 6 8 10
1.0
1.2
1.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output characteristics ( )
Fig.2 Grounded emitter output characteristics ( )
Fig.3 Grounded emitter propagation characteristics
Rev.B
2/4
2SD2114K / 2SD2144S
Transistors
10000 5000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
DC CURRENT GAIN : hFE
2000 1000 500 200 100 50 20 10 1 2 5 10 20
DC CURRENT GAIN : hFE
Ta=25C Measured using pulse current. VCE=5V
10000 5000 2000 1000 500 200 100 50 20
Ta=100C 25C -25C
VCE=3V Measured using pulse current.
2000 1000 500 200 100 50 20 10 5 2 1 2 5 10 20
IC/IB=100 50 25 10
Ta=25C Measured using pulse current.
3V 1V
50 100 200 500 1000
10
1
2
5
10 20
50 100 200
500 1000
50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1000 500 200 100 50 20 10 5 2 1 2 5 10 20 Ta=100C 25C -25C
IC/IB=25 Measured using pulse current.
10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20
IC/IB=10 25 50 100
BASE SATURATION VOLTAGE : VBE(sat) (mV)
2000
BASE SATURATION VOLTAGE : VBE(sat) (mV)
Ta=25C Pulsed
10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta=-25C 25C 100C
lC/lB=10 Measured using pulse current.
50 100 200 5001000
50 100 200
500 1000
50 100 200
5001000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage vs. collector current ( )
Fig.8 Base-emitter saturation voltage vs. collector current ( )
Fig.9 Base-emitter saturation voltage vs. collector current ( )
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10000
TRANSITION FREQUENCY : fT (MHz)
1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5
100
5000 2000 1000 500 200 100 50 20 10 -1 -2
ON RESISTANCE : Ron ()
Ta=25C VCE=10V Measured using pulse current.
Ta=25C f=1MHz IE=0A
50 20 10 5 2 1 0.5 0.2
Ta=25C f=1kHz Vi=100mV(rms) RL=1k
-5 -10 -20 -50 -100 -200 -500 -1000 EMITTER CURRENT : IE (mA)
10 20
50 100
0.1 0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASE CURRENT : IB (mA)
Fig.10 Gain bandwidth product vs. emitter current
Fig.11 Collector output capacitance vs. collector-base voltage
Fig.12 Output-on resistance vs. base current
Rev.B
3/4
2SD2114K / 2SD2144S
Transistors
Ron measurement circuit
RL=1k Input vi 1kHz 100mV(rms)
IB
V Output
v0
Ron=
v0 vi-v0
xRL
Rev.B
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

▲Up To Search▲

Price & Availability of 2SD2144S

	To Download 2SD2144S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .